field-oxide region


field-oxide region
apsauginė oksido sritis statusas T sritis radioelektronika atitikmenys: angl. field-oxide region; protective oxide region vok. Feldoxidbereich, m; Schutzoxidbereich, m rus. защитный оксидный участок, m pranc. région d'oxyde protectrice, f

Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. . 2000.

Look at other dictionaries:

  • protective oxide region — apsauginė oksido sritis statusas T sritis radioelektronika atitikmenys: angl. field oxide region; protective oxide region vok. Feldoxidbereich, m; Schutzoxidbereich, m rus. защитный оксидный участок, m pranc. région d oxyde protectrice, f …   Radioelektronikos terminų žodynas

  • région d'oxyde protectrice — apsauginė oksido sritis statusas T sritis radioelektronika atitikmenys: angl. field oxide region; protective oxide region vok. Feldoxidbereich, m; Schutzoxidbereich, m rus. защитный оксидный участок, m pranc. région d oxyde protectrice, f …   Radioelektronikos terminų žodynas

  • Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… …   Wikipedia

  • Field electron emission — It is requested that a diagram or diagrams be included in this article to improve its quality. For more information, refer to discussion on this page and/or the listing at Wikipedia:Requested images. Field emission (FE) (also known as field… …   Wikipedia

  • Organic field-effect transistor — OFET based flexible display An organic field effect transistor (OFET) is a field effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, by solution casting of… …   Wikipedia

  • Depletion region — In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region or the space charge region, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers… …   Wikipedia

  • Nitric oxide synthase — Identifiers EC number 1.14.13.39 CAS number 125978 95 2 …   Wikipedia

  • Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… …   Wikipedia

  • Complementary metal oxide semiconductor — Un inversor en tecnología CMOS. Complementary metal oxide semiconductor o CMOS es una de las familias lógicas empleadas en la fabricación de circuitos integrados. Su principal característica consiste en la utilización conjunta de transistores de… …   Wikipedia Español

  • Feldoxidbereich — apsauginė oksido sritis statusas T sritis radioelektronika atitikmenys: angl. field oxide region; protective oxide region vok. Feldoxidbereich, m; Schutzoxidbereich, m rus. защитный оксидный участок, m pranc. région d oxyde protectrice, f …   Radioelektronikos terminų žodynas